Technical Notes:

1.Precursor for arsenic doping in MOCVD of HgCdTe films. Absence of As- -H bonds prevents the formation of As-H complexes and its incorporation in the As-doped films

2.ALD/CVD dopant for CdTe/CdS thin films for photovoltaics grown by MOCVD

3.ALD/CVD dopant for GaAs(1-ẞ)Nẞfilms deposited by N-AL D techniquel4]

4.AL D/CVD precursor for p -type epitaxial growth of CdTe on p-type GaAs films[5

5.CVD precursor for GaAs thin films de position from As(NMe2)3 and GaMe3 for solar cells]

References:

1.J. Electron. Mater.. 1996, 25, 1328.

2. J. Cryst. Growth, 1998, 195, 718.

3.Semicond. Sci. Technol. 2008, 23, 01501 7.

4.J. Cryst. Growth, 2009, 31 1.2821

5.J. Electron. Mater., 2014, 43, 2895.

6.RSC Adv..2015, 5, 11812.