| 包装 | 价格 | |
| 5g | 894元 | 留言咨询 |
| 25g | 2886元 | 留言咨询 |
| 100g | 10024元 | 留言咨询 |
Technical Notes:
1. Precursor for the Plasma-assisted atomic layer deposition and post-annealing, enhancement of
low resistivity and oxygen-free nickel nano-films with ammonia as co-reactant
2.Precursor for the ALD of nickel oxide thin films
3.Precursor for the metalorganic chemical vapor deposition of Ni Films -6
References:
1.Journal of Materials Chemistry c, 2016, 4(47), 11059.
2.Chemical vapor deposition, 2011, 17, 177-180. 3.Thin solid films, 2001, 391, 57-61 4.Electrochem. Solid-State L ett. 2002, 5(6), C64-C66 5.Journal of Materials Research, 2000, 15(8), 1828-1833 . 6.Chem. Vap. Deposition, 1999, 5, 135-142. 7.Chem. Vap. Deposition, 1999, 5, 143-149.
