Technical Notes：

Used as MOCVD precursor for making of CoAl2O4 films ^[1], AL D precursor for making of Al2O3 films 2-6, 8-10. and as a Al doping source for ZnO films ^[7].

References:

1.Electrochimica Acta, 2005, 50, 4592

2.J. Kor. Phys. Soc., 2006, 48, 131

3.Thin Solid Films, 2010, 518, 3658

4.J. Vac. Sci. Technol. A, 2012, 3o, 021 505

5.Chem. Mater. 2013, 25, 4619

6.J. Vac. Sci. Technol. A, 2014, 32, 021514

7.J. Mater. Chem. c, 2015,3, 3095

8.Thin Solid Films, 2017, 641, 47